Designator: PDUtBXC-H...Item: 11.14-215, Access STP File for SO-032ACross Reference: N/A

This document defines the JC-42.6 Manufacturer ID. This document covers Manufacturer ID Codes for the following technologies: LPDDR (JESD209), LPDDR2 (JESD209-2), LPDDR3 (JESD209-3), LPDDR4 (JESD209-4), Wide-IO (JESD229), and Wide-IO2 (JESD229-2). The purpose of this document is to define the Manufacturer ID for these devices. Item No. 1725.03C. See Annex for additions/changes. To make a request for an ID code: //www.ljosalfur.com/id-codes-low-power-memories

This document defines the LPDDR5/LPDDR5X standard, including features, functionalities, AC and DC characteristics, packages, and ball/signal assignments. The purpose of this specification is to define the minimum set of requirements for a JEDEC compliant x16 one channel SDRAM device and x8 one channel SDRAM device. LPDDR5/LPDDR5X device density ranges from 2 Gb through 32 Gb. This document was created using aspects of the following standards: DDR2 (JESD79-2), DDR3 (JESD79-3), DDR4 (JESD79-4), LPDDR (JESD209), LPDDR2 (JESD209-2), LPDDR3 (JESD209-3), and LPDDR4 (JESD209-4).

This standard establishes the procedure for testing, evaluating, and classifying devices and microcircuits according to their susceptibility (sensitivity) to damage or degradation by exposure to a defined field-induced charged device model (CDM) electrostatic discharge (ESD). All packaged semiconductor devices, thin film circuits, surface acoustic wave (SAW) devices, opto-electronic devices, hybrid integrated circuits (HICs), and multi-chip modules (MCMs) containing any of these devices are to be evaluated according to this standard. This test method combines the main features of JEDEC JESD22-C101 and ANSI/ESD S5.3.1.

This document provides guidance regarding design considerations, material assessment techniques, and recommendations for material acceptance prior to use in Hybrid/MCM Products. As part of the risk assessment process, both technical requirements and cost should be carefully considered with regard to testing/evaluating the elements of a hybrid microcircuit or Multi-chip Module (MCM) prior to material release for assembly. The intent of this document is to highlight various options that are available to the Hybrid / MCM manufacturer and provide associated guidance, not to impose a specific set of tests.

This document defines the Graphics Double Data Rate 6 (GDDR6) Synchronous Graphics Random Access Memory (SGRAM) specification, including features, functionality, package, and pin assignments. The purpose of this Standard is to define the minimum set of requirements for 8 Gb through 16 Gb x16 dual channel GDDR6 SGRAM devices. System designs based on the required aspects of this standard will be supported by all GDDR6 SGRAM vendors providing compatible devices. Some aspects of the GDDR6 standard such as AC timings and capacitance values were not standardized. Some features are optional and therefore may vary among vendors. In all cases, vendor data sheets should be consulted for specifics. This document was created based on some aspects of the GDDR5 Standard (JESD212).

This standard specifies the general requirements of a statistical process control (SPC) system. This is a revision of JESD557C.

This publication is a guideline to test facilities in their efforts to establish and maintain consistent particle impact noise detection (PIND) testing.

This standard was jointly developed by JEDEC and the Open NAND Flash Interface Workgroup, hereafter referred to as ONFI. This standard defines a standard NAND flash device interface interoperability standard that provides means for system be designed that can support Asynchronous SDR, Synchronous DDR and Toggle DDR NAND flash devices that are interoperable between JEDEC and ONFI member implementations.

This specification establishes the general requirements for hybrid microcircuits, RF/microwave hybrid microcircuits and MCMs (hereafter referred to as devices). Detailed performance requirements for a specific device are specified in the applicable device acquisition document. In the event of a conflict between this document and the device acquisition document, the device acquisition document will take precedence.

This publication establishes guidelines and provides examples by which customers can measure their suppliers based on mutually agreed upon objective criteria.

This document defines standard specifications of DC interface parameters, switching parameters, and test loading for definition of the DDR5 Clock Driver (CKD) for re-driving the DCK for CUDIMM, CSODIMM and CAMM applications. The DDR5CK01 Device ID is DID = 0x0531. (5 = DDR5, 3= Clock Driver, 1= rev 01).

This standard defines the specifications of interface parameters, signaling protocols, and features for DDR5 Serial Presence Detect EEPROM with Hub function (SPD5 Hub) and integrated Temperature Sensor (TS) as used for memory module applications. The Hub feature allows isolation of a local bus from a Controller host bus. The designation SPD5118 or generic term SPD5 Hub refers to the devices specified by this standard.

The manufacturers identification code is defined by one or more 8 bit fields, each consisting of 7 data bits plus 1 odd parity bit. The manufacturers identification code is assigned, maintained and updated by the JEDEC Office. The intent of this identification code is that it may be used whenever a digital field is required, e.g., hardware, software, documentation, etc. To make a request for an ID Code please go to //www.ljosalfur.com/standards-documents/id-codes-order-form

Designator: PDXC-LO288-I0p85-R162p0x6p5Z21p3-N5p20S3p1Z0p2Item: 11.14-216, Access STP Files for SO-023CCross Reference: MO-329, GS-010C

Terminology update.

This standard defines the electrical and mechanical requirements for 288-pin, 1.2 Volt (VDD), Double Data Rate, Synchronous SDRAM Non-Volatile Dual In-Line Memory Modules with NAND Flash backup (DDR4 NVDIMM-N). A DDR4 NVDIMM-N is a Hybrid Memory Module with a DDR4 DIMM interface consisting of DRAM that is made non-volatile through the use of NAND Flash.

This document describes design of test structures needed to assess the reliability of aluminum-copper, refractory metal barrier interconnect systems. This includes any metal interconnect system where a refractory metal barrier or other barrier material prevents the flow of aluminum and/or copper metal ions from moving between interconnect layers. This document is not intended to show design of test structures to assess aluminum or aluminum-copper alloy systems, without barriers to Al and Cu ion movement, nor for Cu only metal systems. Some total interconnect systems might not include barrier materials on all metal layers. The structures in this standard are designed for cases where a barrier material separates two Al or Al alloy metal layers. The purpose of this document is to describe the design of test structures needed to assess electromigration (EM) and stress-induced-void (SIV) reliability of AlCu barrier metal systems.

This method provides procedures to calculate sample estimates and their confidence intervals for the electromigration model parameters of current density and temperature. The model parameter for current density is the exponent (n) to which the current density is raised in Black's equation. The parameter for temperature is the activation energy for the electromigration failure process.

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Item: 11.5-1001, Access STP File for CO-038A
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Item: 11.5-1004, Access STP File for CO-039A
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